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HomeKeywordsstrong-inversion

Keywords: strong-inversion

Static Analog Design Methodology

Guigues F., Rudolff F., Kussener E., L2MP UMR 6137 CNRS - ISEN-Toulon, FR
When strong constraints of supply voltage (< 1V ) and bias current (< 100nA) are required, the only way to meet design’sspecifications without using huge silicon area consists on decreasing transistor’s inversion level and therefore [...]

A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model

Chen Y., Luo J., University of California-Berkeley, US
An analytical model for the electric characteristics of ultrathin double-gate and surrounding-gate MOSFETs in strong inversion and accumulation is presented. The analytical solutions to the 1-D simplified Poisson's equation in both Cartesian and cylindrical coordinates [...]

Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs

Sudhama C., Spulber O., McAndrew C., Thoma R., Motorola SPS, US
Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions [...]

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