strained Si – TechConnect Briefs

A Novel Dual Gate Strained-Silicon Channel Trench Power MOSFET For Improved Performance

Saxena R.S., Kumar M.J., Indian Institute of Technology, New Delhi, IN

We propose a new dual gate trench power MOSFET with strained Si channel that not only provides lower on resistance than the conventional trench MOSFET but also enables the in-circuit configurability of its characteristics for [...]

Technology Limits and Compact Model for SiGe Scaled FETs

Dutton R.W., Choi C-H, Stanford, US

Stress relaxation in strained-Si MOSFETs can be significant in the presence of compressive stress imposed by trench isolation, especially for highly scaled active regions. Stress of the strained region is reduced by 2/3 when the [...]

Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation

Nguyen C.D., Jungemann C., Meinerzhagen B., Technical University Braunschweig, DE

An Improved Modified Local Density Approximation (IMLDA) model for the electron inversion layer in strained Si-nMOSFETs is presented which correctly describes the impact of size quantization on the threshold voltage and capacitance without increasing the [...]

A Physically-Based Electron Mobility Model for Strained Si Devices

Dhar S., Kosina H., Palankovski V., Ungersboeck E., Selberherr S., TU Vienna, AT

A model describing the mobility tensor for electrons in strained Si layers as a function of strain is presented. It includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, [...]

Technology Limits and Compact Model for SiGe Scaled FETs

Dutton R.W., Choi C-H, Stanford, US

Stress relaxation in strained-Si MOSFETs can be significant in the presence of compressive stress imposed by trench isolation, especially for highly scaled active regions. Stress of the strained region is reduced by 2/3 when the [...]

Capacitance-Voltage Characteristics of Metal-Oxide-Strained Semiconductor Si/SiGe Heterostructures

Cavassilas N., Autran J-L, CNRS, FR

We present theoretical investigation of mechanical strain-induced effects in metal-oxide-semiconductor (MOS) structures from an electrical point-of-view. In this work, we start by calculating the strained semiconductor band-structure using a k.p approach over the complete Brillouin [...]