oxidation – Page 2 – TechConnect Briefs

AFM Anodization Studied by Spectromicroscopy

Lazzarino M., Mori G., Ercolani D., Ressel B., Colli A., Sorba L., Locatelli A., Cherifi S., Ballestrazzi A., Heun S., Laboratorio TASC INFM, IT

The fabrication of state-of-the-art semiconductor nanostructures is of great interest both for fundamental physics and device applications. Besides the traditional lithography techniques, local anodic oxidation by atomic force microscopy (AFM) is emerging because of its [...]

A Physically-Based Model for Oxidation in a Circular Trench in Silicon

Xu Y., Sudhama C., Hong S., Sellers J.A., Ambadi S., Kamekona K., Averett G., Ruiz B., Wan I., Cai W., Wu Y., Costa J.C., Davies R.B., ON Semiconductor, US

Oxidation in a circular trench is of relevance in several applications, including trench capacitors in memories. In this work a model for stress-dependent oxidation is presented. The model is based on modifications of the Deal-Grove [...]

A Physically-Based Model for Oxidation in a Circular Trench in Silicon

Xu Y., Sudhama C., Hong S., Sellers J.A., Ambadi S., Kamekona K., Averett G., Ruiz B., Wan I., Cai W., Wu Y., Costa J.C., Davies R.B., ON Semiconductor, US

Oxidation in a circular trench is of relevance in several applications, including trench capacitors in memories. In this work a model for stress-dependent oxidation is presented. The model is based on modifications of the Deal-Grove [...]

A Program for Modeling of Technological Routes of VLSI Fabrication – ProMIC-T

Tesluk V., Korbetskyy O., Lvov Polytechnic, UA

A technological process of the VLSI fabrication constantly improves. In such conditions, new technology and constructive problems appear when making IC with submicron sizes. Decision for these problems is possible only by using CAD tools, [...]