MOST – TechConnect Briefs

Interface-trap Charges on Recombination DC Current-Voltage Characteristics in MOS transistors

Chen Z., Jie B.B., Sah C-T, Nanyang Technological University, SG

The interface traps and trapped charges along the surface channel region are generated during transistor stress or operation and primarily responsible for the changes of device properties. The threshold voltage is varied by the generation [...]

High Conentration of Interface Traps in MOS Transistor Modeling

Chen Z., Jie B.B., Sah C-T, Xiamen University, CN

Modifications of the MOS capacitor and transistor characteristics by the presence of a high concentration of interface traps are described. Change or distortion of the gate/base voltage dependent characteristics are presented, such as the gate [...]

A History of Electronic Traps on Silicon Surfaces and Interfaces

Sah C-T, Jie B.B., Chen Z., University of Florida, US

A review of the electronic or electron and hole traps on silicon surfaces and interfaces is given. They are increasingly affecting the electrical signal properties of silicon diodes and transistors as the technologies for digital, [...]

A History of MOS Transistor Compact Modeling

Sah C-T, University of Florida, US

The MOSFET (Metal-Oxide-Silicon Field-Effect- Transistor) or MOS Transistor (MOST) is a three dimensional electronic device. It operates on the conductivity modulation principle in a thin semiconductor layer by a controlling electric field to give amplifying [...]

A History of MOS Transistor Compact Modeling

Sah C-T, University of Florida, US

The MOSFET (Metal-Oxide-Silicon Field-Effect- Transistor) or MOS Transistor (MOST) is a three dimensional electronic device. It operates on the conductivity modulation principle in a thin semiconductor layer by a controlling electric field to give amplifying [...]