impurity – TechConnect Briefs

Field Emission Properties of Carbon Nanotube Arrays with Defects and Impurities

Roy Mahapatra D., Sinha N., Melnik R., Yeow J.T.W., University of Waterloo, CA

Field emission from carbon nanotubes (CNTs) in the form of arrays or thin films give rise to several strongly correlated process of electromechanical interaction and degradation. Such processes are mainly due to (1) electron-phonon interaction [...]

Investigation of the Behaviors of Various Electroplated Copper films during CMP

Feng H.P., Cheng M.Y., Wang Y.Y., Wan C.C., Wang Y.Y., National Tsing Hua University, TW

The behaviors of various electroplated copper films during CMP are important for removal mechanism and defect generation. This article was to study the characteristics of various copper films during CMP, including impurity effect and current [...]

Phase Field Modeling of Dislocation Network Coarsening, Dislocation – Impurity, and Dislocation – Precipitate Interactions

Shen C., Kazaryan A., Anderson P.M., Wang Y., Ohio State University, US

Interactions of dislocations with one another and their interactions with impurities and precipitates determine the behavior of plastic deformation of crystalline materials. In this presentation, we will discuss recent advances in phase field modeling of [...]

Implementation of Strain Induced Effects in Sensor Device Simulation

Matsuda K., Kanda Y., Naruto University of Education, JP

Device simulation technique is applied to the piezoresistive sensor by including the doping profile and the strain distribution in the silicon substrate. In this simulation, the device equations are solved by Newton's method taking into [...]

Simulation of Silicon Piezoresistive Sensors

Matsuda K., Kanda Y., Toyo University, JP

The temperature infiuence of the heavy doped silicon piezoresistive sensors is simulated. In this simulation, the density of state functions for impurity band and band edge tail are taken into account for carrier and ionized [...]