The temperature infiuence of the heavy doped silicon piezoresistive sensors is simulated. In this simulation, the density of state functions for impurity band and band edge tail are taken into account for carrier and ionized impurity concentrations, and the Fermi level is determined by appling a Newton ite. tion scheme for a charge neutrality condition. The pie –esistance factors are calculated as parameters for the impurity concentration and the power law of the total relaxation time on energy. Simulation results for the ionized impurity scattering show that the heavy doped silicon of the donor concentration 10l7 cm-3 and the acceptor concentration 3 X 102? cm-3 reduces both the temperature coefficient and the sensitivity of gauge factor by about 10. We can gain the signal to noise ratio if the temperature coefficient is regarded as noise. Combined with recent result on good linearity, we can show a guideline for the excellent piezoresistive sensors design simulation.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 586 - 590
Industry sector: Sensors, MEMS, Electronics
Topics: MEMS & NEMS Devices, Modeling & Applications