HfO2 – TechConnect Briefs

On the investigation of an interdigitated, high capacitance ratio shunt RF-MEMS switch for X- band applications

Angira M., BITS PILANI, IN

This paper presents a novel, highly compact capacitive shunt RF MEMS switch. In the presnted switch, interdigitation of signal lines with actuation electrodes. are used. The compactness has been achieved further by incorporating the HfO2 [...]

Comparison of Electrical performance of Symmetric Toggle Switch with different dielectric layers

Maninder K., Central Electronics Engineering Research Institute, IN

This paper presents the electrical performance comparison of Symmetric Toggle RF MEMS Switch (STS), by incorporating hafnium oxide (HfO2) as a dielectric material instead of silicon dioxide (SiO2). Fig. 1(a) and (b) shows the 3-D [...]

Investigation of the Electronic Properties of the ZrO2 and HfO2 Thin Films by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy

Antonov D.A., Filatov D.O., Maximov G.A., Zenkevich A.V., Lebedinskii Yu.Yu., Nizhni Novgorod State University, RU

The advantages of the combined AFM/STM technique for investigating the dielectric properties of ultrathin MeOx layers with high spatial resolution is shown. Particularly, MO2/Si (M=Hf, Zr) interface evolution upon heat treatments is explored. It is [...]