HBT – TechConnect Briefs

High-Frequency Characteristic Optimization of Heterojunction Bipolar Transistors

Li Y., Hwang C-H, Chen Y-C, National Chiao Tung University, TW

In this paper, an optimization technique (so-called the geometric programming) is employed to optimize the base doping and Ge-dose for SiGe HBTs with high cut-off frequency and base-collector current gain. This work first formulates Kroemer’s [...]

Numerical Modeling for Comparison of Emitter-Base Designs of InGaP/GaAs Heterojunction Bipolar Transistors

, Universitat Politecnica de Catalunya, ES

In this work it is investigated the consequences of the design of the emitter pedestal in the electric DC and AC performance of GaInP/GaAs HBTs using numerical modeling TCAD tool. Two different HBTs are studied [...]

Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model

Malladi R.R., Borich V., Sweeney S.L., Rascoe J., Newton K.M., Venkatadri S., Yang J., Chen S., IBM Systems and Technology, US

This paper examines certain aspects of the base resistance model of HiCUM (High Current Model) to address convergence problems seen during 2-tone distortion simulations of SiGe HBTs. Here, we propose some changes to the model [...]

Development and Design Kit Integration of a Scalable and Statistical High Current Model for Advanced SiGe HBTs

Malladi R.M., Newton K.M., Schroter M.S., IBM Systems and Technology, US

In this invited paper, we present the methodology for advanced SiGe HBT modeling and its integration into BiCMOS design kits. We review various model choices and describe, in detail, the extraction of the High Current [...]

Simulation of Heterojunction Bipolar Transistor with Domain Decomposition Method

Zhang Y., Ruden P.P., Oklahoma State University, US

Domain decomposition method is used in simulation of the band profile and the majority carrier concentration profile of AlGaN/GaN heterojunction bipolar transistors. The method is very stable and efficient. With this method different device structures [...]

Investigation of High Frequency Noise in a SiGe HBT Based on Shockley’s Impedance Field Method and the Hydrodynamic Model

Decker S., Neinhus B., Heinemann B., Jungemann C., Meinerzhagen B., University of Bremen, DE

This paper presents the first simulation of the minimum noise figure of a heterojunction bipolar transistor based on Shockley's impedance field method and the hydrodynamic model. The hydrodynamic model and the impedance field method are [...]

Simulating IMD in SiGe HBTs: How good are our models?

Wong P., Pejcinovic B., Portland State University, US

Nominal transistor model parameters are found to be insufficient for reliably predicting intermodulation distortion (IMD) in heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance [...]