GaAs – TechConnect Briefs

A Novel GaAs-on-Si MOSFET for Analog Integrated Circuits

Jawake A.V., Aher S.R., Borse H.S., Bhosale K.S., Patil G.C., Patil S.R., Patil G.C., Patil S.R., JSPM’s Rajarshi Shahu College of Engineering, IN

Over the last few decades silicon has proven its superiority in the semiconductor world with respect to properties like small mass, good carrier capability, low cost, maximum wafer diameter etc. However, since on-state drive current [...]

Simulation of Decrease in Lag phenomena and Current Slump of Field-Plate GaAs FETs

Itagaki K., Ueda H., Terao Y., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which a deep donor “EL2” and a shallow acceptor are considered in a semi-insulating substrate, and the results are compared between the two cases with [...]

Micromechanical GaAs Thermal Convertor for Gas Sensors

Jakovenko J., Lalinsky T., Drzík M., Vanko G., Czech Technical University in Prague, Faculty of Electrical Engineering, CZ

This paper discusses design, simulation and fabrication of new Micromechanical Thermal Converters (MTCs) based on GaAs developed for Gas sensors. GaAs MTCs seem to be very attractive for design of thermally based MEMS sensor devices. [...]

Design and Characterization of new GaAs Micromechanical Thermal Converter developed for Microwave Power Sensor

Jakovenko J., Husak M., Lalinsky T., Czech Technical University in Prague, Faculty of Electrical Engineering, CZ

In this report we demonstrate the design of new GaAs based Micromechanical thermal converter (MTC) that creates heart of the RF power sensor microsystem. Transmitted power is the main quantity measured in RF systems. The [...]

Optimization of GaAs MEMS structures for Microwave Power Sensor

Jakovenko J., Husak M., Lalinsky T., Czech Technical University in Prague, CZ

This work discusses the thermo mechanical simulations performed with the aim to optimise the temperature distribution of the Microwave Power Sensor (MPS) microsystem keeping the thermal stress as low as possible. The concept of the [...]

Growth and Characterization of GaAs/AlGaAs Core-Shell Nanowires and AlGaAs Nanotubes

Noborisaka J., Motohisa J., Hara S., Fukui T., Hokkaido University, JP

We report on the fabrication of GaAs/AlGaAs core-shell nanowires (NWs) and AlGaAs nanotubes by SA-MOVPE and their photoluminescence characterization. The fabrication started from a preparation of patterned GaAs (111) B substrates partially covered with SiO2 [...]

Single-Dot Spectroscopy of Low Density GaAs Quantum Dots Grown by Modified Droplet Epitaxy

Yamagiwa M., Minami F., Koguchi N., Tokyo Institute of Technology, JP

Low density GaAs/AlGaAs quantum dots (QDs) have been fabricated using Modified Droplet Epitaxy (MDE) [1] for the spectroscopic study of single QDs using microphotoluminescence (µPL). In µPL measurements, the excitation/observation area is focused by a [...]

Optical Characteristics of InAs Quantum Dots influenced by AlGaAs/GaAs Superlattice Barriers

Choi H., Jeong Y., Park Y., Lee J., Leem J-Y, Leem J-Y, Jeon M., Jeong Y., Inje University, KR

We investigated the effect of AlGaAs/GaAs superlattice barriers on the optical properties of InAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. The samples used in the present work were grown by molecular beam epitaxy [...]