finite element – TechConnect Briefs

FE Simulation of material removal and surface properties for EDM during single and multiple spark occurrences

Lim H.J., Domblesky J.P., Kim N., Hwang S.Y., Sogang University, KR

EDM represents an effective machining process for hard-to-machine materials. Although EDM has many advantages, it lacks well-developed technological base and level of fundamental understanding that characterizes other metal cutting technologies. This has limited the development [...]

A Sparse Grid based Collocation Method for Model Order Reduction of Finite Element Models of MEMS under Uncertainty

Sumant P.S., Wu H., Cangellaris A.C., Aluru N., University of Illinois at Urbana-Champaign, US

A methodology is proposed for the model order reduction of finite element models of MEMS devices under random input conditions. In this approach, the reduced order system matrices are represented in terms of their convergent [...]

New Analysis Method for Coupled-Field Micro Devices

Motiee M., Khajepour A., Mansour R.R., University of Waterloo, CA

MEMS actuators are typically used for either one time deployment of structures for automatic assembly or constant periodic actuation as in case of micro optic scanners. Electro-thermal actuators rely on the joule heating resulting small [...]

Multivariant Measurements for Thin Film Adhesion as a Function of Temperature and Thin Film Thickness

Chiang M., Song R., Karim A., Amis E.J., National Institute of Standards and Technology, US

The progress of a proposed high-throughput combinatorial approach to the edge delamination test is reported. This approach can construct the adhesion reliability, as a function of temperature and film thickness (in the sub-micron range) in [...]

Three-Dimensional Simulation of AlxGa1-xAs/GaAs Gradual Heterojunction Bipolar Transistor

García-Loureiro A.J., Pena T.F., Prat Viñas Ll., Univ. Santiago de Compostela, ES

In this work we present the results of the simulation of AlxGa1-xAs/GaAs gradual heterojunction bipolar transistor using a parallel three-dimensional semiconductor device simulator. This simulator is based on drift-diffusion transport model. In order to solve [...]

Finite Element Based Electrostatic-Structural Coupled Analysis with Automated Mesh Morphing

Zhulin V.I., Owen S.J., Ostergaard D.F., ANSYS, Inc., US

A co-simulation tool based on finite element principles has been developed to solve coupled electrostatic-structural problems. An automated mesh morphing algorithm has been employed to update the field mesh after structural deformation. The co-simulation tool [...]

Numerical and Analytical Modeling of the Piezoelectric Transformer and Experimental Verification

Hallaert S., Sarraute E., Le Pioufle B., URA CNRS 1375, FR

In this paper, to approach the modeling aspect, we have selected a Rosen-type structure of piezo-electric transformer which, for us, seems very interesting from an educational point of view. Two approaches will be presented, (i) [...]

Capacitance Extraction from Complex 3D Interconnect Structures

Cartwright D., Csanak G., George D., Walker R., Kuprat A., Dengi A., Grobman W., Los Alamos National Laboratory, US

A new tool has been developed for calculating the capacitance matrix for complex 3D interconnect structures involving multiple layers of irregularly shaped interconnect, imbedded in different dielectric materials. This method utilizes a new 3D adaptive [...]