FinFETs – TechConnect Briefs

Analytical Solutions to Model the Line Edge Roughness and its Effect on Subthreshold Behavior of DG FinFETs

Monga U., Fjeldly T.A., Norwegian University of Science and Technology, and University Graduate Center (UNIK), NO

Statistical variability such as line edge roughness (LER) and random dopant effects have become major concerns in the nanoscale regime. Due to the intrinsic body, multigate devices such as FinFETs don’t suffer from random dopant [...]

Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs

Chan M., Wu W., HKUST, HK

The geometry-dependent parasitic components in multi-fin FinFETs are studied. The gate-resistance has a stronger dependent on the device geometry compared with the planar MOSFETs. Parasitic fringing capacitance and overlap capacitance become highly coupled to the [...]