effective mobility – TechConnect Briefs

An Effective Mobility Model for Tunneling Double-Gate MOSFET (T-FinFET)

He J., He X., Pan J., Liu J., Li C., Liu J., Hu G., Ma G., He J., He X., Chan M., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

We have derived an analytical model for the effective field (Eeff) model of undoped Ultra-Thin Body (UTB) Double Gate (DG) SOI Tunneling MOSFETs ( T-FinFET) from the solution of the Poisson’s equation in this paper [...]

Mobility Extraction and Compact Modeling for FETs Using High-K Gate Materials

Dutton R.W., Liu Y., Choi C-H, Chen T.W., Stanford University, US

This simulation work discusses the impact of direct gate tunneling on effective mobility extraction methods, particularly the Inversion Charge Pumping (ICP) method proposed recently for transistors with high-k gate dielectrics. The valence-band electron gate tunneling [...]

Low Field Electron Mobility in Ultra-Thin Strained-Si Directly on Insulator MOSFET in Sub-0.1µm Regime

Amtablian S., Barraud S., CEA-DRT/LETI, FR

A 200 word (or less) text only summThe fabrication of Fully-Depleted strained-Si directly on insulator (SSOI) MOSFET was recently demonstrated. The combination of strain-induced transport property with the scaling advantage of ultra-thin body devices is [...]