DG-MOSFETs – TechConnect Briefs

UF “Compact” Models: A Historical Perspective

Fossum J.G., University of Florida, US

The history of the developments of “compact” models for SOI MOSFETs at the University of Florida (UF) is reviewed. The uniqueness and innovation of the UF “process-based” models are reiterated, and their global utility as [...]

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Zhou X., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., He J., Chan M., Peking University, CN

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model [...]

Surface Potential versus Voltage Equation from Accumulation to Strong Region for Undoped Symmetric Double-Gate MOSFETs and Its Continuous Solution

He J., Chen Y., Li B., Wei Y., Chan M., Peking University, CN

Surface potential is one key variable in DG MOSFET compact modeling. A complete surface potential versus voltage equation and its continuous solution from the accumulation to strong inversion region are presented in this paper for [...]