current collapse – TechConnect Briefs

Analysis of Lag Phenomena and Current Collapse in Field-Plate AlGaN/GaN HEMTs with High-k Passivation Layer

Komoto K., Saito Y., Horio K., Shibaura Institute of Technology, JP

In AlGaN/GaN HEMTs, slow current transients are often observed even if the gate voltage or the drain voltage is changed abruptly. This is called gate lag or drain lag, and problematic in circuits applications. The [...]

Analysis of Gate-Length Dependence of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs

Chiba T., Saito Y., Tsurumaki R., Horio K., Shibaura Institute of Technology, JP

We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. We particularly study how the gate lag, drain lag and current collapse [...]

Reduction in Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with High Acceptor Density in a Buffer Layer

Saito Y., Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

We make a two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep-acceptor density and the field plate [...]

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Different Types of Buffer Layers

Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

In AlGaN/GaN HEMTs, slow current transients are often observed even if the gate voltage VG or the drain voltage VD is changed abruptly. This is called gate lag or drain lag, and is problematic for [...]

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Deep Acceptors in a Buffer Layer

Noda N., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep acceptor is considered in a semi-insulating buffer layer, and quasi-pulsed current-voltage curves are derived from them. It is studied how the existence [...]

Simulation of Back-Electrode Effects on Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs

Horio K., Onodera H., Fukai T., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of gate-field-plate AlGaN/GaN high electron mobility transistors with a backside electrode is performed by considering a deep donor and a deep acceptor in a buffer layer. Effects of introducing a field plate [...]

Simulation of Field-Plate Effects on Lag and Current Collapse in GaN-based FETs

Itagaki K., Nakajima A., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analyses of field-plate GaN MESFETs and AlGaN/GaN HEMTs with a semi-insulating buffer layer have been performed in which a deep donor and a deep acceptor are considered in the buffer layer. Quasi-pulsed I-V [...]