charge model – TechConnect Briefs

Charge Partition in Lateral Nonuniformly-Doped Transistor

Zhang J., Zhou X., Zhu G., Lin S., Nanyang Technological University, SG

In this work, we aim to model the LDMOS capacitance behavior of the core channel. In order to simplify the problem, the diffused doping profile in the core channel is approximated as a step profile. [...]

Bias Dependence of Low Frequency Noise in 90nm CMOS

Mavredakis N., Antonopoulos A., Bucher M., Technical University of Crete, GR

The bias dependence of low frequency noise (LFN) is investigated with measurements in 90nm CMOS. A recent charge-based LFN model combining carrier and mobility fluctuation components is compared to data from multi-finger devices with a [...]

Scalable MOSFET Short-channel Charge Model in All Regions

See G.H., Chiah S.B., Zhou X., Chandrasekaran K., Shangguan W., Zhu Z., Lim G.H., Pandey S.M., Cheng M., Chu S., Hsia L.-C., NTU, SG

Short-channel effects (SCEs) for both intrinsic chargesand extrinsic capacitances need to be modeled when theMOSFET channel is short. The intrinsic SCEs are modeled using bulk-charge sharing and quasi-two dimensional potential barrier loweirng; extrinsic overlap capacitances [...]