carrier-based model – TechConnect Briefs

A Continuous yet Explicit Carrier-Based Core Model for the Long Channel Undoped Surrounding-Gate MOSFETs

Zhang J., Zhang L., He J., Liu F., Zhang J., Zhang L., Feng J., Ma C., Peking University, CN

An explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs is presented in the paper An analytic approximation solution to the carrier concentration is developed from a simplified Taylor expansion of the exact [...]

A Carrier Based Analytic Model for Undoped Surrounding-Gate MOSFETs

He J., Zhang X., Chan M., Wang Y., Peking University, CN

A carrier-based analytic DCIV model for the undoped cylindrical surrounding-gate MOSFETs is presented in this paper. It is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of [...]