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Keywords: carbon nanotube

Modeling and Simulation of Multi-walled Carbon Nanotubes using Molecular Dynamics Simulation

Wong C.H., Liew K.M., He X.Q., Tan M.J., Meguid S.A., Nanyang Technological University, SG
Molecular dynamics simulation is performed on the buckling behavior of single and multi-walled carbon nanotubes under axial compression. Brenners second generation empirical potential is used to describe the many-body short range interatomic interactions for single-walled [...]

Gated Carbon Nanotube Field Emission Enhancement and Regeneration by Hydrogen

Hsu D.S.Y., Shaw J.L., Naval Research Laboratory, US
We have previously demonstrated two different configurations of integrally gated carbon nanotube field emitter arrays (FEAs). CNTs were grown inside microfabricated gate apertures with and without silicon posts. Salient features of these in-situ grown microgated [...]

Nano Gripper using Carbon Nanotube

Lee J.S., Kwon S-K, Choi J-S, Kang G-S, Kwak Y-K, Kim S-H, KAIST, KR
In this paper, we proposed a nano gripper that was made from two nano probes. And, those nano probes were made from the tungsten tip and multi-wall carbon nanotube with acrylic adhesive under optical microscope. [...]

Ab Initio Simulation on Mechanical and Electronic Properties of Nanostructures under Deformation

Umeno Y., Kitamura T., Kyoto University, JP
Nanostructures have been attracting attention because of their prominent properties, and their applications for novel devices with advanced functions have been attemted. Large stress and strain occur in local regions in materials with nanostructures owing [...]

STM/STS Studies of SWNTs in Bundles, C60 Thin Films and DNA Molecules

Maruyama Y., Ikeda K., Suzuki K., Yoshikawa T., Kato T., Iijima M., Hosei University, JP
The electronic structures of individual carbon nanotubes in a bundle are characterized by STM/STS technique. It is statistically found that the tubes with the same character tend to be assembled in one bundle and its [...]

Massively Parallel Simulation on Large-Scale Carbon Nanotubes

Tejima S., Berber S., Minami K., Jimbo N., Namamura H., Kanada Y., Tomanek D., Research Organization for Information Science & Technology, JP
Carbon nanotubes and fullerene have a lot of applicability for industries as nanotechnology. In order to extend its applicability, the computational simulation would be powerful and effective tools for finding and creating new materials and [...]

Application of Nano-carbon Cold Cathodes for Lighting Elements

Obraztsov A.N., Volkov A.P., Petrushenko Yu.V., Satanovskaya O.P., Moscow State University, RU
In our recent publications it was reported about intensive field emission (FE) of electrons from nano-carbon (nC) thin film material grown by non-catalytic CVD method. The low FE threshold (less than 1.5 V/mm), high density [...]

Transport Properties For Carbon Nanotubes Under Hydrostatic Pressure

Chen F., Xue Y.Y., Stokes K.L., Wang H., Chu C.W., University of Houston, US
Multi-wall carbon nanotubes (MWNTs) were mixed with polystyrene (PS) by 20 wt%, which is close to the percolation threshold. Temperature (T) dependence of Seebeck coefficient (S) and resistance (R) for the sample (MWNT-PS) were measured [...]

Simulation of Carbon Nanotube-based Nanoelectromechanical Switches

Dequesnes M., Rotkin S.V., Aluru N.R., University of Illinois at Urbana-Champaign, US
We study the pull-in voltage characteristics of several multiwall nanotube electromechanical switches such as suspended carbon nanotubes over a graphitic ground lectrode. Electromechanical analysis has been performed by accounting for three coupled energy domains: elastostatics, [...]

Field Emission of Carbon Nanotubes and the Electronic Structure of Fullerenes Encapsulated in Carbon Nanotubes

Cho Y., Kim G., Lee S., Ihm J., Seoul National University, KR
We have performed first-principles calculations on the field emission of carbon nanotubes. The three-dimensional character of the current source, as well as the effect of the external electric field, are explicitly considered. The calculated electron-leakage [...]

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