BJT – TechConnect Briefs

Low-Latency Analog Processors for Performance Control of MEMS

Han Y., Zhu Z., Abrol A., Clark J.V., Auburn University, US

Towards faster feedback response for controlling the performance of microelectromechanical systems (MEMS), we present the first use of the mathematical processing properties of bipolar junction transistors (BJT) for such control. This concerns a type of [...]

Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation

Loechelt G.H., Sellers J., Morgan J., Azam M., ON Semiconductor, US

The optimization of bipolar transistors for high speed applications requires knowing the trade-off between several competing factors, including emitter-base junction charging time, base transit time, base-collector capacitance, high injection degradation, and collector debiasing [1]. Numerical [...]