ATLAS device simulator – TechConnect Briefs

Investigation of Frequency Dependent Noise Performance Metrices for Gate Electrode Work function Engineered Recessed Channel MOSFET

Agarwala A., Chaujar R., Delhi Technological University, IN

As MOSFET device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This paper predicts the feasibility of a novel design i.e., Gate Electrode Work function Engineered Recessed [...]

Optimization of the device design technologies for optimum analog/RF performance of Nanoscale DG MOSFETs

Sharma R.K., Bucher M., Technical University of Crete, GR

Analog/RF performance of new device architecture: graded channel dual material double gate (GCDMDG) is investigated using ATLAS device simulator. A close comparison with double gate (DG), graded channel double gate (GCDG) and dual material double [...]