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HomeAuthorsZhang Y.

Authors: Zhang Y.

Fate, Transport, and Toxicity of Nanomaterials in Drinking Water

Zhang Y., Koeneman B.A., Chen Y., Westerhoff P., Capco D.G., Crittenden J., Arizona State University, US
The objective of this research is to evaluate the potential risk of human exposure to nanomaterials in drinking water by examining three issues: 1) characteristics and stability of nanomaterials in the water environment; 2) removal [...]

Qdots as smart pH probes monitor proton flux driven by ATP synthesis and optical coder for detection various virus

Zhang Y., Deng Z., Yue J., Tang F., Institute of Biophysics, Chinese Academy of Sciences, CN
The chromatophores allow self assemble with the negatively charged Qdots through electrostatic reaction. The fluorescence intensity of Qdots not only was vastly different in the solution and on the surface of chromatophores, but also for [...]

Experimental Visualization of Bubble Generation and Breakup in T-junctions of Microchannels

Zhang Y., Xiao Q., Cheng L., Wang L., The University of Hong Kong, HK
experimental visualization, bubble generation and breakup, T-junctions, microchannels

Control of Particles Using Multi-Frequency DEP

Loire S., Zhang Y., Bottausci F., Mezic I., McDonald N., university of california, santa barbara, US
We present numerical simulations and experiments on dielectrophoretic (DEP) separation and trapping performed in a titanium-based microchannel linear electrode array. The device is designed to allow for effects driven by inhomogeneities in electric-field magnitude driven [...]

Single Transistor AND Gate

Chengalvala V., Zhang Y., Oklahoma State University, US
Double-gate SOI MOSFET structure opens the door for many novel devices by the coupling of the two gates. If the same voltage is applied to both gates, the depletion regions are equally partitioned. On the [...]

Simulation of Heterojunction Bipolar Transistor with Domain Decomposition Method

Zhang Y., Ruden P.P., Oklahoma State University, US
Domain decomposition method is used in simulation of the band profile and the majority carrier concentration profile of AlGaN/GaN heterojunction bipolar transistors. The method is very stable and efficient. With this method different device structures [...]

High-Field and High-Temperature Transport in n-Type 3C-SiC

Zhang Y., Zhang Y., Xidian University, CN
The physical model used in Monte Carlo simulation is developed considering the energy gap structures and the main scattering mechanisms in details. The static electron transport in the material 3C-SiC is analyzed by single particle [...]

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