Williams R.Q. – TechConnect Briefs

Compact Model Methodology for Dual-Stress Nitride Liner Films in a 90nm SOI ULSI Technology

Williams R.Q., Chidambarrao D., McCullen J.H., Narasimha S., Mitchell T.G., Onsongo D., IBM Corporation, US

This work presents a novel methodology for a physically-based, layout-dependent nitride liner stress model that works with readily-available compact models. The methodology includes a data-calibrated, semi-empricial model and is tightly-coupled to circuit netlist extraction for [...]

Predicting the SOI History Effect Using Compact Models

Na M-H, Watts J.S., Nowak E.J., Williams R.Q., Clark W.F., IBM Corporation, US

A simple and effective compact model methodology that predicts the history effect in silicon-on-insulator (SOI) is discussed. In this study we employ three physical parameters to modify the body-potentials of SOI FETs in an inverter [...]