Vasileska D. – Page 3 – TechConnect Briefs

Monte Carlo and Energy Balance Simulations of a Deep Sub-micrometer Conventional and Asymmetric MOSFET Device Structures

Mannargudi A., Vasileska D., Arizona State University, US

We have simulated a 100 nm assymetric MOSFET device structure using both the Silvaco ATLAS energy balance model and the in-house 2D Monte Carlo particle-based simulator. Our investigations show that the energy balance simulation results [...]

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices

Vasileska D., Knezevic I., Akis R., Ferry D.K., Arizona State University, US

We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quan-tum-mechanical space-quantization effects along the growth [...]

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Akis R., Milicic S., Ferry D.K., Vasileska D., Arizone State University, US

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a [...]

Efficient Poisson Equation Solvers for Large Scale 3D Simulations

Speyer G., Vasileska D., Goodnick S.M., Arizona State University, US

Self-consistent semiconductor device modeling requires repeated solution of the 2D or 3D Poisson equation that describes the potential profile of the device for a given charge distribution. As a result, efficient methods for the solution [...]

Discrete Impurity Effects in Silicon Quantom Dots

Milicic S.N., Vasileska D., Akis R., Gunther A., Goodnick S.M., Arizona State University, US

We have developed efficient self-consistent 3D Schrodinger-Poisson solver to model the energy level spectrum in silicon quantum dots. We find that the energy level spectrum in the dot can be easily tuned by varying the [...]

3D Simulations of Ultra-Small MOSFETs: The Role of the Short Range Coulomb Interactions and Discrete Impurities on Device Terminal Characteristics

Gross W.J., Vasileska D., Ferry D.K., Intel Corporation, US

We have developed a three-dimensional particle based simulator with a coupled molecular dynamics routine that avoids the "double-counting" of the long-range portion of the Coulomb force. As opposed to drift-diffusion based simulators, the Monte Carlo [...]

Modeling Artificial Molecules Composed of Coupled Quantum Dots

Akis R., Vasileska D., Arizona State University, US

Recently, there has been much interest in coupled quantum dots. With individual dots, if the energy levels can be resolved, then one can think of a dot as representing an "artificial atom" [1]. Thus, fabricating [...]

Monte-Carlo Simulation of GaAs Devices Using High Generality Object-Oriented Code and Encapsulated Scattering Tables

Harris J., Vasileska D., Arizona State University, US

Many factors are responsible for the continued shift in industry prototyping preference from device fabrication to device simulation. One of the incentives for this transition is the generality and flexibility gained by avoiding a physical [...]