Thornton T.J. – TechConnect Briefs

Integrated Techniques for Transmembrane Protein Sensing

Wilk S.J., Petrossian L., Goryll M., Thornton T.J., Goodnick S.M., Tang J.M., Eisenberg R.S., Arizona State University, US

We present a method for the microfabrication of apertures in a silicon substrate using well-known cleanroom technologies and a novel approach using phase sensitive detection to measure single channels of transmembrane proteins. These proteins are [...]

Study of the RF Characteristics features of Optimized SOI – MESFETs

Tarik K., Vasileska D., Thornton T.J., Arizona State University, US

We have already demonstrated that the SOI MESFET device structure is a suitable candidate for micropower circuit applications due to its high anticipated cut-off frequency . Even though the device offers higher fT, there is [...]

Study of Cutoff Frequency Calculation in the Subthreshold Regime of Operation of the SOI – MESFETs

Tarik K., Vasileska D., Thornton T.J., Arizona State University, US

Micropower circuits based on sub-threshold MOSFETs are used in a variety of applications ranging from digital watches to medical implants. The principal advantage of a transistor operating in the sub-threshold regime is the minimum power [...]

Microfabricated Silicon Apertures for Ion Channel Measurement

Wilk S.J., Goryll M., Petrossian L., Laws G.M., Goodnick S.M., Thornton T.J., Saraniti M., Tang J.M., Eisenberg R.S., Arizona State University, US

Ion channels are proteins that act as pores in cell membranes and allow only specific ions to pass through the cell wall. Here, we present a method for microfabrication of apertures in a silicon substrate [...]

Sub-Threshold Electron Mobility in SOI-MESFETs

Khan T., Vasileska D., Thornton T.J., Arizona State University, US

Micropower circuits use subthreshold MOSFETs that consume minimal power resulting from the combination of ultra-low drain currents (10-11 < Id < 10-5 A/µm) and small drain voltages required for saturation (Vd sat ~150-200mV). Unfortunately, sub-threshold [...]

Molecular Control of the Drain Current in a Buried Channel MOSFET

Yang J., de la Garza L., Thornton T.J., Kozicki M., Gust D., Arizona State University, US

We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately – 4.5 V. We explain [...]