Tanaka A. – TechConnect Briefs

Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow

Ueno F., Tanaka A., Miyake M., Iizuka T., Yamamoto T., Kikuchihara H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

High-voltage devices are utilized for a variety of applications, with application voltages ranging from a few volts to a few hundred volts. To develop efficient circuits for the variety of applications, accurate modeling of the [...]

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

Iizuka T., Fukushima K., Tanaka A., Ueno M., Miura-Mattausch M., Hiroshima University, JP

A wide range of application has made high-voltage (HV) MOSFETs evolve into application-specific structures. Trench-gate type HV-MOSFET is one of them; its user application space tends to fall on a larger power consumption domain, compared [...]

Modeling of the impurity-gradient effect in high-voltage MOSFETs

Maekawa Y., Fukushima K., Tanaka A., Kikuchihara H., Miyake M., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

Two major high-voltage MOSFET types are commonly used by semiconductor industries. One has a symmetrical structure, and the other has a laterally-diffused asymmetric structure called LDMOS. Here our focus is the LDMOS structure, where an [...]