Compact Modeling of Noise in non-uniform channel MOSFET

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Compact MOSFET noise models are mostly based on the Klaassen-Prins (KP) method. However, the noise properties of lateral nonuniform MOSFETs are considerably different from the prediction obtained with the conventional KP based methods which, at low gate voltages, can overestimate the thermal noise by 2-3 orders of magnitude. The presence of lateral nonuniformity makes the vector impedance field (the quantity responsible for noise propagation) position and bias dependent. This insight clearly explains the observed discrepancy and shows that the bias dependence of the important noise parameters cannot be predicted by conventional KP based methods.Interestingly, this bias dependence of noise parameters in the presence of lateral asymmetry can be effectively used in the channel engineering of MOSFET to optimize the RF noise performance. In this talk we will show how to model noise in lateral asymmetric device and how the position and bias dependence of impedance fields can be exploited to improve the RF noise performance of MOSFET

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 808 - 813
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4200-8505-1