Ren Y. – TechConnect Briefs

Numerical Method to Simulate GFET Terahertz Wave Detection

Ma X., He J., He X., Li C., He J., He X., Jun P., Hu G., Ren Y., Wang X., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

A numerical method to simulate THz wave generation and detection of the graphene base field effect transistor (GFET) is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab [...]

Graphene Based Field Effect Transistor Analog/RF Performance Analysis from Non-equilibrium Green’s Function Simulation

Chen Y., He J., He X., Li C., Liu J., He J., He X., Jun P., Hu G., Liu J., Ren Y., Ma X., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

Based on the non-equilibrium Green’s function simulation, the Graphene Field Effect Transistor (GFET) analog/RF performance including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details. The analysis method [...]

Surface Potential Based Compact I-V Model for GaN HEMT Devices

Chang C., He J., He X., He Y., Li C., Liu J., He J., He X., He Y., Liu J., He J., He X., He Y., Pan J., Hu G., Ren Y., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers and high-power switching applications. Along with the fast [...]