Padmanabhan B. – TechConnect Briefs

Current Degradation due to electromechanical coupling in GaN HEMT’s

Padmanabhan B., Vasileska D., Goodnick S.M., Arizona State University, US

The major reliability concern in GaN HEMT technology is the current degradation due to electromechanical coupling.Electromechanical coupling is the change in the piezoelectric polarization charge in the device with the application of bias. A theoretical [...]

The role of Electromechanical coupling in AlGaN/AlN/GaN HEMTs

Padmanabhan B., Vasileska D., Goodnick S.M., Arizona State University, US

we present simulation results for GaN HEMTs in which the structure has additional AlN spacer layer thus completely modifying the electromechanical coupling approach.