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HomeAuthorsMunteanu D.

Authors: Munteanu D.

Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates

Autran J-L, Munteanu D., Tintori O., Harrison S., Decarre E., Skotnicki T., CNRS, FR
A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The [...]

New Compact Model for Generation Drain Current Transients in Weak and Moderate Inversions of Submicron Floating-Body PD SOI MOSFETs

Ionescu A.M., Munteanu D., Swiss Federal Institute of Technology-EPFL, CH
In this paper, generation-type drain current transients, in advanced (down to 50nm gate-length) floating-body PD SOI MOSFETs are investigated by 2D numerical simulation in weak inversion operation. An original compact analytical model is derived for [...]

Impact of Non-Stationary Transport Effects on Realistic 50nm MOS Technology

Munteanu D., Le Carval G., Guegan G., LETI, CEA/Grenoble, DMEL, FR
This paper highlights the impact of non-stationary transport on performances of deep submicron CMOS bulk technology. We present a quantitative analysis of technology influence on the needed level for carrier transport modeling (Drift-Diffusion versus Energy [...]

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