Machado M.B. – TechConnect Briefs

MOSFET threshold voltage: definition, extraction, and applications

Machado M.B., Siebel O., Schneider M.C., Galup-Montoro C., Federal University of Santa Catarina, BR

The threshold voltage VT is a fundamental parameter in the characterization of MOS transistors and should be used, whatever is the adopted model for the transistor. The classical definition of threshold: phis = 2phiF +V [...]

Interrelations between Threshold Voltage Definitions and Extraction Methods

Schneider M.C., Galup-Montoro C., Machado M.B., Cunha A.I.A., Federal University of Santa Catarina, BR

This paper presents a brief discussion on the main MOSFET threshold voltage definitions available in the literature as well as on associated extraction methodologies. In order to compare these definitions and methodologies, we take advantage [...]

Unambiguous Extraction of Threshold Voltage Based on the Transconductance-to-Current Ratio

Cunha A.I.A., Schneider M.C., Galup-Montoro C., Caetano C.D.C., Machado M.B., Federal University of Santa Catarina, BR

This paper presents a very simple methodology for determining the threshold voltage. The procedure is based on the expressions of the Advanced Compact MOSFET (ACM) model, valid in all regimes of operation, which assures physical [...]

Extraction of Mosfet Effective Channel Length and Width Based on the Transconductance-To-Current Ratio

Cunha A.I.A., Schneider M.C., Galup-Montoro C., Caetano C.D.C., Machado M.B., Federal University of Santa Catarina, BR

This paper presents a very simple methodology for determining the effective channel length and width, which is independent of the determination of the threshold voltage. The procedure is based on measurement of the transconductance-to-current ratio [...]