Lu H. – TechConnect Briefs

Analytic Charge Model for Double-Gate and Surrounding-Gate MOSFETs

Yu B., Lu H., Lu W-Y, Lu H., Lu W-Y, Taur Y., UCSD, US

An analytic charge model for both double-gate (DG) and surrounding-gate (SG) MOSFETs is presented. With only the mobile charge term, Poisson’s equation is rigorous solved and the analytic electrostatic potential is derived. The development of [...]

Compact Modeling of Short Channel Double-Gate MOSFETs

Lu H., Liang X., Wang W., Taur Y., Univ. California, San Diego, US

This talk presents analytical modeling of short-channel effect in double-gate MOSFETs. 2-D Poisson’s eq. is solved as a boundary value problem in subthreshold. 2-D potential distribution and subthreshold currents have been calculated and verified by [...]

Physics-Based, Non-Charge-Sheet Compact Modeling of Double-Gate MOSFETs

Lu H., Taur Y., University of California at San Diego, US

A physics-based, non-charge-sheet analytic potential model is presented for undoped (or lightly doped) Double Gate (DG) MOSFETs. With only the mobile charge term included, Poisson’s equation is rigorously solved and the electrostatic potential is derived [...]

Design Optimization of Micromachined High Aspect Ratio 3D On-Chip Solenoid Inductor

Chomnawang N., Lu H., Colinjivadi K., Lee J., University of Texas at Dallas, US

We report the simulation work done by using Sonnet EMÔ on high aspect ratio (1:4 and 1:8) 3D on-chip air-core solenoid inductors. Simulations on 2, 3, and 5-turn inductors with 200 and 400 mm high [...]