Laviron C. – TechConnect Briefs

Methodology for Prediction of Ultra Shallow Junction Resistivities Considering Uncertainties with a Genetic Algorithm Optimization

Renard C., Scheiblin P., de Crécy F., Ferron A., Guichard E., Holliger P., Laviron C., CEA-LETI, FR

The accurate prediction of arsenic activation after spike annealing is mandatory for Ultra Shallow Junction (USJ) sheet resistance optimization for advanced NMOS transistors engineering. For the first time, we propose a fast and efficient methodology [...]

Predictive and Calibrated Simulation of Doping Profiles: Low Energy As, B and BF2 Ion Implantation

Scheiblin P., Roger F., Poncet D., Laviron C., Holliger P., Laugier F., Guichard E., Caire J.P., LETI, FR

In this work, we propose calibrated models for predictive simulation of low energy Arsenic, Boron and BF2 ion implantation in the suitable range for sub-100nm CMOS technology. The International Technology Roadmap for Semiconductors (ed. 1999) [...]