Predictive and Calibrated Simulation of Doping Profiles: Low Energy As, B and BF2 Ion Implantation
Scheiblin P., Roger F., Poncet D., Laviron C., Holliger P., Laugier F., Guichard E., Caire J.P., LETI, FR
In this work, we propose calibrated models for predictive simulation of low energy Arsenic, Boron and BF2 ion implantation in the suitable range for sub-100nm CMOS technology. The International Technology Roadmap for Semiconductors (ed. 1999) [...]