RF-MOSFET Model Parameter Extraction with HiSIM
Miura-Mattausch M., Sadachika N., Murakawa M., Mimura S., Higuchi T., Itoh K., Inagaki R., Iguchi Y., Hiroshima University, JP
This paper discusses a feasibility of an automatic parameter extraction method with the GA (Genetic Algorithm) for surface-potential-based MOSFET model HiSIM (Hiroshima-university STARC IGFET Model), where all device characteristics are described as functions of the [...]