Guan X. – TechConnect Briefs

Computation-assisted nanopore detection of uranyl ions

Roozbahani G.M, Chen X., Zhang Y., Guan X., Illinois Institute of Technology, US

Because of uranium mining, nuclear power production, nuclear weapon development, as well as other industrial and medical application, uranium has been one of the most common radioactive contaminants in the environment, which raises concerns about [...]

New Elements and Features in the Process Design Kits for a FinFET Technology

Lu N., Baizley A., Guan X., Johnson J., McCullen J., Ozbek A., Rahman A., Wang H., Yu M., Zemke C., Rausch W., Wachnik R., IBM, US

Parasitic resistance is a primary performance constraint in FinFET technologies. We report that new and innovative elements and features have been introduced into Process Design Kits for 14nm FinFET technology. They enable accurate and efficient [...]

On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling

Guan X., Yu S., Wong H.S.P., Stanford University, US

The trap-assisted conduction and filamentary switching mechanisms of the HfOx based resistive memory are studied. A numerical simulator is developed to reproduce the experimental I-V curves. Comparison with experiments shows that the cycle-to-cycle variation in [...]

Nanopore detection of nerve agent degradation products

Guan X., Gupta J., Zhao Q., de Zoysa R.S., Jayawardhana D.A., The University of Texas at Arlington, US

Improved analytical capability for detection of organophosphate chemical agents (i.e. nerve gases) remains a high priority need in our continuing defense against future terrorist attacks. A nanopore stochastic sensing method for the rapid detection of [...]