On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling

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The trap-assisted conduction and filamentary switching mechanisms of the HfOx based resistive memory are studied. A numerical simulator is developed to reproduce the experimental I-V curves. Comparison with experiments shows that the cycle-to-cycle variation in the RRAM is mainly due to the variation in the gap distance between the filament tips and the electrode. A set of analytical equations suitable for compact modeling is then derived to capture the switching behavior of metal oxide-based RRAM (OxRRAM). Through the introduction of random perturbations of the gap size, the model successfully reproduces the measured resistance variation of the multi-level RRAM cell.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 815 - 820
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4665-6275-2