Goodnick S.M. – Page 2 – TechConnect Briefs

3D Biconjugate Gradient-Multi Grid Coupling Schemes for Field Equations in Semiconductor Device Simulation

Ayubi-Moak J., Wigger S., Goodnick S.M., Saraniti M., Arizona State University, US

A significant portion of the time required for simulating full three-dimensional (3D) charge transport in semiconductor devices using particle-based methods is spent solving the necessary field equations. Two highly effective, iterative techniques available for solving [...]

Efficient Poisson Equation Solvers for Large Scale 3D Simulations

Speyer G., Vasileska D., Goodnick S.M., Arizona State University, US

Self-consistent semiconductor device modeling requires repeated solution of the 2D or 3D Poisson equation that describes the potential profile of the device for a given charge distribution. As a result, efficient methods for the solution [...]

Discrete Impurity Effects in Silicon Quantom Dots

Milicic S.N., Vasileska D., Akis R., Gunther A., Goodnick S.M., Arizona State University, US

We have developed efficient self-consistent 3D Schrodinger-Poisson solver to model the energy level spectrum in silicon quantum dots. We find that the energy level spectrum in the dot can be easily tuned by varying the [...]

Hybrid CA/Monte Carlo Modeling of Charge Transport in Semiconductors

Saraniti M., Goodnick S.M., Wigger S.J., Arizona State University, US

We report on the modeling of ultra-small MOS devices using a newly developed full band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Monte-Carlo/Cellular Automata simulation engine self-consistently coupled [...]

Three-Dimensional Multi-Grid Poisson Solver for Modeling Semiconductor Devices

Wigger S.J., Saraniti M., Goodnick S.M., Arizona State University, US

In this paper, a full three-dimensional (3D), inhomogenous linear multi-grid Poisson solver is presented for application in particle-based simulation tools for devic emodeling. This algorithm represents the first such fully 3D multi-grid solver for device [...]

Full-Band Cellular Automata for Modeling Transport in Sub-Micrometer Devices

Saraniti M., Wigger S.J., Goodnick S.M., Illinois Institute of Technology, US

The aim of the present work is to discuss a new cellular automaton (CA) approach to model charge transport in semiconductors taking into account the full-band representatoin of the electronic structur eand of the phonon [...]

Cellular Automata Studies of Vertical MOSFETs

Saraniti M., Wigger S., Zandler G., Formicone G., Goodnick S.M., Arizona State University, US

This paper presents an overview of the cellular automata (CA) method for semiconductor device simulation. The main advantages of the CA method over the Monte Carlo (MC) approach are presented, and limitations of its modeling [...]