Ferry D.K. – Page 2 – TechConnect Briefs

Self-consistent Modeling of Open Quantum Devices

Akis R., Shifren L., Ferry D.K., Arizona State University, US

In this paper, we describe a method of simulating electron transport in semiconductor devices that operate in the quantum regime. Specifically, devices formed in which the electrons are confined to two dimensions (2D) and transport [...]

The Use of Bohm Trajectories and the Effective Potential in Probing Quantum Mechanical Behavior in 2-D and Spintronic Sub-micron Devices

Shifren L., Akis R., Ferry D.K., Arizona State University, US

We utilize an effective potential to reproduce Bohm (quantum) trajectory behavior using purely classical trajectories. The effective potential is a novel method for including certain quantum phenomena into classical simulations by projecting the non-zero dimensions [...]

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Akis R., Milicic S., Ferry D.K., Vasileska D., Arizone State University, US

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a [...]

3D Simulations of Ultra-Small MOSFETs: The Role of the Short Range Coulomb Interactions and Discrete Impurities on Device Terminal Characteristics

Gross W.J., Vasileska D., Ferry D.K., Intel Corporation, US

We have developed a three-dimensional particle based simulator with a coupled molecular dynamics routine that avoids the "double-counting" of the long-range portion of the Coulomb force. As opposed to drift-diffusion based simulators, the Monte Carlo [...]

Ensemble Monte Carlo Simulation of Raman Scattering in an AlxGa1-xAs System to Determine the Relative Strength of the Polar Optical Modes

Shifren L., Ferry D.K., Arizona State University, US

A Monte Carlo simulation is used to study Raman scattering and the relative strengths of the polar optical modes in an AlxGa1-xAs system. The dual polar optical modes in the system are incorporated by including [...]

Self-Consistent Calculations of Spatial Electron Densities in Quantum Dots Using a Coupled Recursive Green’s Function and Poisson Solver

Badrieh F., Ferry D.K., Arizona State University, US

We are utilizing the Recursive Green's function method to calculate the conductance in quantum dots as a function of Fermi energy, magnetic field and random potentials. We have extended the use of the method to [...]

Ultrasmall Devices: Are We Ready for Quantum Effects?

Ferry D.K., Arizona State University, US

It is clear that continued scaling of semiconductor devices will bring us to a regime with gate lengths of less than 70 nm within another decade. While there are questions to be answered in the [...]

An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future

Akis R., Vasileska D., Ferry D.K., Arizona State University, US

A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under [...]

Complex Potentials, Dissipative Processes and General Quantum Transport

Ferry D.K., Barker J.R., Akis R., Arizona StateUniversity, US

Complex potentials have been used in the past to simulate dissipative processes, but the normal form of a simple constant term of the form t / h i serves only to trap/detrap particles and does [...]

The Influence of Space Quantization Effect on the Threshold Voltage, Inversion Layer and Total Gate Capacitance in Scaled Si-MOSFETs

Vasileska D., Ferry D.K., Arizona State University, US

We investigate the influence of poly-gate depletion on the inversion layer capacitance CinV, total gate capacitance CtOt and threshold voltage VT in scaled Si MOSFETs using both semiclassical (SC) and quantum-mechanical (QM) description of the [...]