A Mathematical Model for the Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film
Ravariu C., Ravariu F., Rusu A., Dobrescu D., Dobrescu L., Dobrescu D., Dobrescu L., Ravariu C., Ravariu F., Codreanu C., Avram M., University of Bucharest, RO
The analytical models for the electric field and potential distributions are necessary to establish the inversion or accumulation conditions at the front and back interfaces for a lot of SOI devices. The paper refers to [...]