Ding L. – TechConnect Briefs

Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures

Liu Y., Chen T.P., Ng C.Y., Ding L., Nanyang Technological University, SG

In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is [...]

Charge Trapping and Charge Decay in Silicon Nanocrystals

Ng C.Y., Ding L., Chen T.P., Nanyang Technological University, SG

For applications of silicon nanocrystals in memory device, it is necessary to understand the discharging behaviors of the nanocrystals as the data endurance in memory and decay constant are important parameters to be measured. In [...]

Optical Properties of Silicon Nanocrystals Embedded in SiO2 Matrix

Ding L., Chen T.P., Liu Y., Nanyang Technological University, SG

In this work, spectroscopic ellipsometry (SE), which is a nondestructive method, is employed to determine the optical constants (refractive index and extinction coefficient) and thus the dielectric functions of the isolated nc-Si with a mean [...]