Graphene Based Field Effect Transistor Analog/RF Performance Analysis from Non-equilibrium Green’s Function Simulation
Chen Y., He J., He X., Li C., Liu J., He J., He X., Jun P., Hu G., Liu J., Ren Y., Ma X., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Based on the non-equilibrium Green’s function simulation, the Graphene Field Effect Transistor (GFET) analog/RF performance including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details. The analysis method [...]