Ceric H. – TechConnect Briefs

Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis

Holzer S., Hollauer Ch., Ceric H., Wagner S., Entner R., Langer E., Grasser T., Selberherr S., Vienna University of Technology, AT

We introduce the combination of three-dimensional transient electro-thermal interconnect simulations for intrinsic thermo-mechanical stress problems. In order to study the development of thermal stresses we use a finite element simulator for the investigation on stresses [...]

Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology

Wittmann R., Puchner H., Hinh L., Ceric H., Gehring A., Selberherr S., Vienna University of Technology, AT

The NBTI degradation was systematically investigated for a 90nm p-MOSFET by simulation and experiment. The reaction-diffusion model was extended for NBTI simulations at arbitrary gate voltage, frequency, and duty cycle within a calibrated range. Long-time [...]