Baltes H. – TechConnect Briefs

Moment-based Analysis of Mechanical Effects on Trench-Hall Devices

Taschini S., Korvink J.G., Baltes H., ETH Zürich, CH

This paper presents a novel method for the assessment of mechanical effects on trench-Hall devices based on a moment expansion combined with two-dimensional finite-element discretization. Analogously to plate theories, a truncated moment expansion of the [...]

Nonlinear Analysis of Electrostatic Actuation in MEMS with Arbitrary Geometry

Taschini S., Baltes H., Korvink J.G., ETH-Hoenggerberg, CH

We present an explicit formulation for the Jacobian (or tan-gent) matrix of the discretized non-linear model for a cou-pled electromechanical system. The Jacobian matrix, consisting of the derivatives of the residual, is needed in Newton-Raphson-based [...]

Offset Analysis in CMOS Magnetotransistors by Numerical Simulation

Metz M., Baltes H., ETH Zürich, CH

Signal offset in magnetotransistors is for the first time analyzed by numerical simulation. Offset needs to be mini-mized to improve the accuracy of low cost CMOS contact-less angle detection systems. The offset is an unwanted [...]

CMOS MEMS and their Simulation

Korvink J.G., Emmenegger M., Taschini S., Baltes H., ETH Zürich, CH

The most appropriate tools for the modelling and simulation of MEMS are strongly related to the technology used to fabricate them. CMOS MEMS are naturally combined with circuitry, and in a packaged form they are [...]