University of Florida – Page 3

A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs

Fossum J., Ge L., Chiang M-H, University of Florida, US

A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs [...]

Optimized Threshold-Voltage MOS Transistor Compact Model from the 4-Component Theory

Jie B.B., Sah C-T, University of Florida, US

Based on Sah's 1996 four-component exact formula, a new optimized compact model is derived for long channel MOS transistors. This new model covers subthreshold and linear operation ranges using four independent optimization voltage parameters in [...]

A History of MOS Transistor Compact Modeling

Sah C-T, University of Florida, US

The MOSFET (Metal-Oxide-Silicon Field-Effect- Transistor) or MOS Transistor (MOST) is a three dimensional electronic device. It operates on the conductivity modulation principle in a thin semiconductor layer by a controlling electric field to give amplifying [...]

Cellular Response to Nanoparticle Exposure

Erdos G.W., Moraga D., Palazuelos M., Powers K., University of Florida, US

Cells exposed to particles will phagocytose them and shuttle the endosomes to lysosomal compartments. Lysosomal mebranes rupture, possibly due to free radical formation. Proteases are released which inturn compromise the mitochondrial membranes. The mitochondria leak [...]

A Technology-Independent Model for Nanoscale Logic Devices

Frank M.P., University of Florida, US

In this paper we describe a class of technology-independent nano-device models, motivated from fundamental physical considerations, and give some examples of their applications in nanocomputer architecture and systems engineering. These models rest on recent insights [...]

Surface Modification of Al203 Fiber with Nanoparticles Using a Dry Mechanical Coating Technique

Coowanitwong N., Wu C-Y, Nguyen J., Cai M., Ruthkosky M., Rogers J., Feng L., Watano S., Yoshida T., University of Florida, US

Nanoparticles are of great interest to many industries due to their unique properties. One of the well-known properties is high surface area, which is critically essential to enhancing performance activity [1] and greatly vital to [...]

Design and fabrication of an integrated CMOS-MEMS 3-axis accelerometer

Xie H., Fedder G.K., Pan Z., Frey W., University of Florida, US

This paper reports a novel single structure, three-axis sensing accelerometer based on post-CMOS process. The resultant device incorporates both thin-film structures and bulk Si structures to achieve three-axis acceleration sensing without extra front-side lithography, or [...]