Technical University of Vienna – TechConnect Briefs

Variance Reduction in Monte Carlo Device Simulation by Means of Event Biasing

Kosina H., Nedjalkov M., Selberherr S., Technical University of Vienna, AT

A theoretical analysis of the Monte Carlo (MC) method for the solution of the stationary boundary value problem defined by the Boltzmann equation is briefly outlined. This analysis clearly shows how event biasing can be [...]

Transient Simulation of Ferroelectric Hysteresis

Dragosits K., Hagenbeck R., Selberherr S., Technical University of Vienna, AT

We present amodel that allows the analysis of the behavior of ferroelectric materials in a wide range of frequencies. A common approach to the transient properties of dielectrics based on differential equations was extended by [...]

Inductance Calculation in Interconnect Structures

Harlander C., Sabelka R., Selberherr S., Technical University of Vienna, AT

We present a package based fnite elements for two and three-dimensional analyses of interconnect structures. Two preprocessors allow a layer-based input of the simulation geometry and the specification of the boundary conditions. Additionally, a third [...]

Automatic Device Design Optimization with TCAD Frameworks

Stockinger M., Selberherr S., Technical University of Vienna, AT

A design optimization method is presented which utilizes automatic optimization capabilities within TCAD frameworks. This method is applied to doping profile optimizations of ultra-low-power CMOS transistors with 0.25 and 0.1 um gate lengths. Two different [...]