Stanford University – Page 4 – TechConnect Briefs

Investigation of Tetrhedral Automatic Mesh Generation for Finite-Element Simulation of Micro-Electro-Mechanical Switches

Wilson N.M., Pinsky P.M., Dutton R.W., Stanford University, US

Simulation of micro-electro-mechanical systems (MEMS) typically involves the requirement to mesh complex 3-D representations of the geometry. Since proper manual or semi-automated mesh generation requires significant user time and knowledge, there is great interest in [...]

Complete Characterization of Electrostatically-Actuated Beams Including Effects of Multiple Discontinuities and Buckling

Chan E.K., Garikipati K., Dutton R.W., Stanford University, US

The entire process of calibrating an electromechanical simulator ñ identifying relevant parameters, designing and measuring test structures, extracting parameters using detailed electromechanical simulations, and extrapolating the behavior of an actual device ñ is presented. The [...]

Modelling Calibration and Validation of Contributions to Stress in the STI Process Sequence

Garikipati K., Rao V.S., Hao M.Y., Ibok E., De Wolf I., Dutton R.W., Stanford University, US

The mathematics and mechanics of the Shallow Trench Isolation process are described. The diffusion reaction problem is posed in terms of fundamental mass balance laws. Finite strain kinematics is invoked to model the large expansion [...]

A Novel Method to Utilize Existing TCAD Tools to Build Accurate Geometry Required for MEMS Simulation

Wilson N.M., Liang S., Pinsky P.M., Dutton R.W., Stanford University, US

This paper details a technique that exploits domain decom-position and utilizes a combination of 1-D, 2-D, and 3-D process simulation to build physically accurate geometry of micro-electro-mechanical systems (MEMS) for simula-tion. The size and aspect [...]

Characterization of Electrostatically-Actuated Beams Through Capacitance-Voltage Measurements and Simulations

Chan E.K., Garikipati K., Hsiau Z-K, Dutton R.W., Stanford University, US

Detailed 2D electromechanical simulations of electrostatically-actuated beams reveal phenomena not captured by 1D or quasi-2D simulations. The behavior of the beam when in contact with a dielectric layer is studied. Capacitance-voltage measurements are used to [...]

Challenges in Process Modeling for MEMS

Dutton R.W., Chan E.K., Wilson N.W., Hsiau Z-K, Shen S., Stanford University, US

The potency of the silicon IC technology base, its use of CAD for design targeted for manufacturing and the related challenges faced in deployment of MEMS are discussed. The rapidly growing field of MEMS has [...]