Shibaura Institute of Technology – Page 2

Reduction in Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with High Acceptor Density in a Buffer Layer

Saito Y., Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

We make a two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep-acceptor density and the field plate [...]

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Different Types of Buffer Layers

Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

In AlGaN/GaN HEMTs, slow current transients are often observed even if the gate voltage VG or the drain voltage VD is changed abruptly. This is called gate lag or drain lag, and is problematic for [...]

Simulation of Current Slump Removal in Field-Plate GaAs MESFETs with a Thin Passivation Layer

Nomoto A., Sato Y., Horio K., Shibaura Institute of Technology, JP

In compound semiconductor FETs, slow current transients are often observed even if the drain voltage VD or the gate voltage VG is changed abruptly [1]. This is called drain lag or gate lag, and undesirable [...]

Simulation of Buffer Current Effects on Breakdown Voltage in AlGaN/GaN HEMTs Having Passivation Layers with Different Permittivity

Satoh Y., Hanawa H., Horio K., Shibaura Institute of Technology, JP

It is well known that the introduction of filed plate enhances the breakdown voltage in AlGaN/GaN HEMTs. This is because the electric field at the drain edge of the gate is reduced. However, the field [...]

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Deep Acceptors in a Buffer Layer

Noda N., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep acceptor is considered in a semi-insulating buffer layer, and quasi-pulsed current-voltage curves are derived from them. It is studied how the existence [...]

Simulation of Current Slump Removal in Field-Plate GaAs MESFETs

Nomoto A., Satoh Y., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that [...]

Simulation of High-k Passivation-Layer Effects on Breakdown Voltage in AlGaN/GaN HEMTs

Hanawa H., Satoh Y., Horio K., Shibaura Institute of Technology, JP

A two-dimensional analysis of breakdown characteristics in AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer. The dependence of an off-state breakdown voltage on the [...]

Analysis of Breakdown Characteristics in Gate and Source Field-Plate AlGaN/GaN HEMTs

Onodera H., Hanawa H., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great attention because of their applications to high-power microwave devices. It is known that the introduction of field plate enhances the power performance of AlGaN/GaN HEMTs, because the off-state breakdown [...]

Simulation of Back-Electrode Effects on Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs

Horio K., Onodera H., Fukai T., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of gate-field-plate AlGaN/GaN high electron mobility transistors with a backside electrode is performed by considering a deep donor and a deep acceptor in a buffer layer. Effects of introducing a field plate [...]

Simulation of Removal of Surface-State-Related Lag and Current Slump in GaAs FETs

Hafiz H., Kumeno M., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to [...]