Norwegian University of Science and Technology

Nanoelectrochromics for Smart Windows: Materials and Methodologies

Gao T., Jelle B.P., Norwegian University of Science and Technology, NO

Abstract By actively regulating the solar radiation (both visible and near infrared part) passing through the window aperture, electrochromic (EC) smart windows can improve both the energy efficiency and the user comfort of windows. Thus, [...]

Ag Nanoparticles as Low Emissivity Coating Materials for Window Glazing Applications

Gao T., Jelle B.P., Norwegian University of Science and Technology, NO

We communicate here the application of Ag nanoparticles as low-e coating materials, which may bridge the vast effort on the synthesis of metallic nanoparticles and the great potential of improving the energy feature of building [...]

Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles

Fjeldly T.A., Monga U., Norwegian University of Science and Technology, NO

A compact, unified and analytical model is presented for the 3D electrostatics of nanoscale, multigate MOSFETs. The model is based on solutions of the 3D Laplace equation (subthreshold) and Poisson’s equation (above threshold), where suitable [...]

Analytical Modeling of the Subthreshold Electrostatics of Nanoscale GAA Square Gate MOSFETs

Vishvakarma S.K., Fjeldly T.A., Norwegian University of Science and Technology, NO

An analytical model is presented for the 3-D electrostatics of lightly doped GAA square gate MOSFETs operating in the subthreshold domain. The model is based on the assumption of parabolic potential distributions in the directions [...]

Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

Monga U., Fjeldly T.A., Norwegian University of Science and Technology, NO

A quantum mechanical modeling framework for ultra-thin body double-gate MOSFETs operating in subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body [...]

Physical Properties of Metal Coated Polymer Particles for Anisotropic Conductive Adhesive

Zhang Z.L., He J.Y., Kristiansen H., Norwegian University of Science and Technology, NO

Metalized and monodisperse polymer particles with diameter ranging from 0.5 to 30 µm are increasingly used in developing new electrical packaging technology, such as Anisotropic Conductive Adhesives (ACA) in Flat Panel Displays (FPDs). In these [...]

Capacitance modeling of Short-Channel DG and GAA MOSFETs

Børli H., Kolberg S., Fjeldly T.A., Norwegian University of Science and Technology, NO

Based on our framework model of the electrostatics and the drain current in short-channel, nanoscale DG and GAA MOSFETs, we here present a corresponding model for the device capacitances covering all regimes of operation from [...]

Stacked Coupled-Disk MEMS Resonators for RF Applications

Nygaard K.H., Grinde C., Fjeldly T.A., Norwegian University of Science and Technology, NO

A novel, stacked coupled-disk resonator design is presented where the silicon discs vibrate in radial contour modes, actuated by electrodes wrapped around the disk periphery. The self-aligned, central stem mediates the coupling and also anchors [...]

Compact Modeling Framework for Short-Channel DG and GAA MOSFETs

Børli H., Kolberg S., Fjeldly T.A., Norwegian University of Science and Technology, NO

To achieve sufficient accuracy in the compact modeling of short-channel, nanoscale DG and GAA MOSFETs, the multi-dimensionality of the body potential and the electronic charge distribution has to be accurately described. In sub-threshold, the device [...]

Precise 2D Compact Modeling of Nanoscale DG MOSFETs Based on Conformal Mapping Techniques

Fjeldly T.A., Kolberg S., Norwegian University of Science and Technology, NO

In nanoscale double gate MOSFETs, the dependence on the bias voltages of the 2D electron barrier topology in the conducting channel is all-important for the operation of the device. We consider a DG MOSFET with [...]