The EKV 3.0 Compact MOS Transistor Model: Accounting for Deep-Submicron Aspects
Bucher M., Enz C., Krummenacher F., Sallese J.M., Lallement C., Porret A.S., National Technical University of Athens, GR
The EKV 3.0 compact MOS transistor model for advanced IC design is presented. Its basis is an ideal analytical charge-based model including static to non-quasistatic dynamic aspects and noise. The ideal model is extended to [...]