National Chiao Tung University – Page 3

Hydrothermal Growth of ZnO Nanostructures Using Zinc Thin Films as Seed Layer

Yang J-Y, Cheng H-W, Cheng T.-C., Cheng H-W, Cheng T.-C., Li Y., National Chiao Tung University, TW

Different zinc oxide nanostructures are selectively synthesized by a simple reaction of zinc acetate dihydrate with hexamethyltetramine (HMT) under mild hydrothermal conditions using zinc thin films as seed layer. Scanning electron microscopy (SEM) result of [...]

Parameterized Structural Capacitance Behavioral Modeling for TFT-LCD Panel

Huang H.M., Li Y., National Chiao Tung University, TW

Thin film transistors (TFTS) find wide usage in active matrix liquid crystal displays. The basic principle of operation of the LCD panel is to control the transparency of each pixel portion by bus lines to [...]

Gold nanoparticles caused learning impairment in mice

Chen Y-S, Hung Y.-C., Liau I., Lin L.-W., Hong M.-Y., Huang G.S., National Chiao Tung University, TW

Aims : To investigate the toxic effect of gold nanoparticles (GNP) to the learning and memory of mice. Key findings: Both 17 nm and 37 nm GNPs induced severe sickness in mice. However, only 17 [...]

Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio

Cheng H-W, Hwang C-H, Li Y., National Chiao Tung University, TW

For nano-CMOS device design, the device with multiple-fin structure has the superior short channel effect (SCE), high driving current and has been considered as an index as potential candidates. The feasibility of various multi-fin options [...]

Characteristic Variability of Novel Lateral Asymmetry Nano-MOSFETs Due to Random Discrete Dopants

Lee K-F, Hwang C-H, Li T-Y, Li Y., Li T-Y, Li Y., National Chiao Tung University, TW

In this paper, we for the first time investigate the random-dopant-induced device DC, the gate capacitance, the timing, and the high frequency characteristics fluctuations in nanoscale LAC devices. The conventional LAC device with higher channel [...]

Process- and Random-Dopant-Induced Characteristic Variability of SRAM with nano-CMOS and Bulk FinFET Devices

Li T-Y, Li Y., Hwang C-H, Li T-Y, Li Y., National Chiao Tung University, TW

The magnitude of the intrinsic parameter fluctuations, such as process-variation and random dopant fluctuation, steadily increase with the reduction of device dimensions, and lead to pronounced component mismatch in area constrained circuits such as static [...]

Comprehensive Examination of Threshold Voltage Fluctuations in Nanoscale Planar MOSFET and Bulk FinFET Devices

Hwang C-H, Cheng H-W, Yeh T-C, Li T-Y, Li Y., Huang H.M., Li T-Y, Li Y., National Chiao Tung University, TW

Impact of the intrinsic fluctuations on device characteristics, such as the threshold voltage (Vth) fluctuation is crucial in determining the behavior of nanoscale semiconductor devices. The fluctuations are pronounced for continuously shrunk CMOS devices. To [...]

High-Frequency Characteristic Optimization of Heterojunction Bipolar Transistors

Li Y., Hwang C-H, Chen Y-C, National Chiao Tung University, TW

In this paper, an optimization technique (so-called the geometric programming) is employed to optimize the base doping and Ge-dose for SiGe HBTs with high cut-off frequency and base-collector current gain. This work first formulates Kroemer’s [...]

Finite Element Analysis of a MEMS-Based High G Inertial Shock Sensor

Wang Y.P., Hsu R-Q., Wu C.W., National Chiao Tung University, TW

Inertial sensors have been extensively utilized in science and industry. For high G (>300G) applications, reaction times for conventional mechanical type shock sensors are not fast enough. In some cases the shock sensor structures disintegrate(>5000G). [...]

Low Turn-On Voltage and High Focus Capability Nanogaps for Field Emission Displays

Kuo Y-T, Lo H-Y, Li Y., National Chiao Tung University, TW

Nanometer scale gaps (nanogaps) has been wildly used as electrode in molecular electronics [1,2], biosensor [3], and vacuum microelectronics [4]. However, the difficult from the fabrication limits the development of such technique until the surface [...]