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HomeAffiliationsMcMaster University

Affiliations: McMaster University

Surface Passivation of GaAs Nanowires Ensembles for Photovoltaic Applications

Chia A.C.E., LaPierre R.R., McMaster University, CA
Fabrication, electrical characterization and analytical modeling of an AlInP-passivated GaAs NW ensemble is presented. Novel processing steps were used to fabricate NW ensemble devices which were subsequently characterized electrically and fit with an analytical model, [...]

A Physics-Based Empirical Model for Ge Self Diffusion in Silicon Germanium Alloys

Rabie M.A., Haddara Y.M., McMaster University, CA
We propose a physics-based model for the Ge diffusivity in SiGe and empirically fit the model to previously reported experimental results. The self-diffusivity of Ge can be given by: DGe=D0*exp(Sx)*exp(-E/kT) where x is the Ge [...]

Effect of Strain on the Oxidation Rate of Silicon Germanium Alloys

Rabie M.A., Gou S., Haddara Y.M., Knights A.P., Wojcik J., Mascher P., McMaster University, CA
We report on a series of experiments in which a strained Si0.95Ge0.05 layer 600Å thick was oxidized along with relaxed SiGe layers and Si samples. In this work, we observed that the oxidation rate of [...]

Modeling Germanium-Silicon Interdiffusion in Silicon Germanium/Silicon Super Lattice Structures

Hasanuzzaman M., Haddara Y.M., Knights A.P., McMaster University, CA
Intermixing at heterointerfaces and the broadening of the SiGe layer in SiGe/Si super-lattice (SL) structures can be detrimental to device performance. Thus it is important to develop predictive model for interdiffusion in SL structures. In [...]

Modeling Voids in Silicon

Hasanuzzaman M., Haddara Y.M., Knights A.P., McMaster University, CA
Voids in silicon are used for gettering transition metals and may be used to detect point defect injection. High energy implants can create a separation between vacancies and interstitials making a vacancy rich region near [...]

Modeling the electrical characteristics of FET-type sensors for biomedical applications

Deen M.J., Shinwari M.W., McMaster University, CA
Uniquely examining and identifying biological pathogens is of great importance in health care, as it facilitates early detection, isolation and possibly prevention of many diseases. Availability of highly efficient and easily produced sensors could have [...]

RF Noise Models of MOSFETs- A Review

Asgaran S., Jamal Deen M., McMaster University, CA
A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal noise modeling is presented. Although the modeling of MOSFET noise dates back to many years ago, the enhanced noise generated [...]

The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETs

Deen J., Ranuárez J.C., Chen C-H, McMaster University, CA
The impact of the gate tunneling current (GTC) on the noise performance of MOSFETs with very thin gate oxides is studied by developing analytical expressions for the four parameters that describe the noise performance of [...]

A Comprehensive Kinetic Model for Wet Oxidation of Silicon Germanium Alloys

Rabie M.A., Haddara Y.M., Carette J., McMaster University, CA
Our objective is to study the kinetics of SiGe oxidation with a view to studying factors that would improve the quality of the oxide. We propose a model based on the simultaneous oxidation of both [...]

Modeling of Germanium/Silicon Interdiffusion in Silicon/Silicon Germanium/Silicon Single Quantum Well Structures

Hasanuzzaman M., Haddara Y.M., McMaster University, CA
Intermixing at heterointerfaces and the broadening of the SiGe layer in a Si/SiGe/Si single quantum well (SQW) structure can be detrimental to device performance. Thus it is important to develop predictive models for interdiffusion phenomena [...]

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